PART |
Description |
Maker |
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
CY7C1049CV33-12ZSXA CY7C1049CV33-12ZSXAT CY7C1049C |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
CY62157ESL-45ZSXI CY62157ESL-13 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY62148ELL-45ZSXA CY62148ELL-45ZSXI CY62148ELL-55S |
4-Mbit (512 K ? 8) Static RAM 4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY7C1049DV33-10VXI CY7C1049DV33-10VXIT CY7C1049DV3 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM MoBL® 32-Mbit (2M x 16) Static RAM MoBL® 16-Mbit (1M x 16) Static RAM "SHIELDING BAG 16 X 18"" Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”,“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
CY7C1049D-10VXI CY7C1049D11 |
4-Mbit (512 K × 8) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 16-Mbit (1M x 16) Pseudo Static RAM CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AM41DL6408G25IS AM41DL6408G25IT AM41DL6408G45IS AM |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4x 16位).0伏的CMOS只,同时作业闪存兆位 M中的x 8-Bit/512x 16位),静态存储器 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4米x 16位).0伏的CMOS只,同时作业闪存兆位 M中的x 8-Bit/512亩x 16位),静态存储器
|
Advanced Micro Devices, Inc.
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices] SPANSION
|